The critical concentration for the metal-nonmetal transition has been calculated for the polytypes $3C,$ $4H,$ and $6H$ of SiC, doped with Al, Ga, B, and Sc. Three different computational methods have been utilized: the first is Mott's original model, the second is an extended Mott-Hubbard model, and the third is based on the total energy of the metallic and nonmetallic phases. All three methods show similar results. For comparison, calculations for p-type Ge and Si materials have also been performed.
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Persson et al. (2001) studied this question.
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