Modulation of the surface potential of GaAs Schottky barrier field-effect transistors by 1–6-kV electrons with current densities in the range between 10−5 and 10−3 A/cm2 can produce current gains G⩾105 for electron beam currents pulsed at rates ⩽104 Hz.
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Wieder et al. (1980) studied this question.
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