Experimental Correlation between Diagonal and Hall Conductivities of Silicon MOS inversion Layers in Strong Magnetic Fields

Correlations between the diagonal and Hall conductivities are experimentally studied in the (0↓+), (0↓-), (1↑+), (1↑-), (1↓+) and (1↓-) Landau subbands (0 and 1 refer to Landau quantum numbers, ↑ and ↓ to parallel and antiparallel spin direction to the magnetic field, respectively, + and - to the lower and higher valley, respectively) of an n -channel inversion layer on a silicon (001) surface in magnetic fields of 15 T and 14 T at temperatures between 1.5 K and 0.35 K. Results are consistent with numerical studies.