The preparation of CeO 2 thin films on sapphire by DC reactive magnetron sputtering of metallic Ce target in an argon-oxygen mixed gas is reported. The resputtering of the film deposited facing the target track was observed. The films deposited far from the sputtering system axis exhibited well-oriented crystalline structure and a smooth surface that allows the utilization of these films as sub-layers for further thin film growth. No substantial diffusion of Al into the CeO 2 film was observed.
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Hollmann et al. (1993) studied this question.
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