The ion-beam channeling technique has been used to characterize the interface and the first few layers of [100] GaSb/AlSb superlattice structures. Strain caused by alternating tensile and compressive stress has been detected by measuring the oscillation of the [110]-aligned direction with depth. From the angular displacement and its oscillation, the amount of strain in the superlattice has been determined directly.
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Chu et al. (1983) studied this question.
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