A novel structure consisting of a thick non-pseudomorphic InAlAs grid layer and InGaAs-GaAs strained-layer superlattice dislocation filter is proposed for realizing tensile strain on GaAs substrates. The structure is examined and characterized by photoluminescence, Nomarski etch-pit microscopy and double crystal X-ray diffraction and found to be effective in the incorporation of tensile strain in devices grown on the GaAs substrate.
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Chan et al. (1993) studied this question.
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