Planar channelling of MeV H + and He + ions was studied using phosphorus implanted silicon crystals with a well-defined network of edge dislocations. The energy dependence of dechannelling at dislocation is shown to be proportional to the square root of the energy of the ion. The dechannelling processes of energetic charged particles at extended dislocation are discussed.
No takes yet. Share an insight, caveat, or question.
Mannami et al. (1980) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: