Nonstoichiometry-Induced Carrier Modification in Gapless Type Atomic Switch Device Using Cu2S Mixed Conductor

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Both ac impedance and dc polarization have been measured to investigate the switching property of a Cu 2 S gapless type atomic switch with two-probe cells composed of asymmetric configuration of ion blocking and reversible electrodes in addition to symmetric one with reversible electrodes. Strong nonlinear p-type conductivity in current–voltage ( I – V ) characteristics and a marked change of overall ac impedance with the variation of applied dc bias voltage observed are attributed to the nonstoichiometry induced carrier modification in a Cu 2 S thin film modulated by the Cu vacancy migration under the presence of an electrical potential field.