Answers are grounded in this paper and cite their sources.
The electric field-induced metal–insulator transition (MIT) of VO 2 films on c-Al 2 O 3 (001) substrates was investigated in planer devices with strip line-patterned VO 2 and two terminal electrodes. In a device with an electrode gap of 10 µm and an electrode length of 10 µm, we observed a transition from the initial high resistance state (HRS) to the low resistance state (LRS) in which the resistance of LRS was time-independent but current-dependent during electric pulse addition. Another planer device with different electrode dimensions supported the time-independent behavior of the LRS even for a high current. Present results strongly suggested that the electric field-induced MIT of a VO 2 film can realize a stable resistive switching based on the Mott transition eliminating the Joule heating effect.
No takes yet. Share an insight, caveat, or question.
Okimura et al. (2007) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: