Theory of lifetime measurement with the scanning electron microscope in a semiconductor containing a localized defect: Transient analysis

This paper presents a transient analysis of electron-beam induced current in a semi-infinite semiconductor containing an individual pointlike defect. A focused electron beam positioned in the vicinity of the defect is cut off and the resulting current versus time decay is calculated. It is shown that the time constant of this decay is a complex function of geometrical aspects of the system, bulk properties of the material, and strength of the defect. Computational results are given for a dislocation line parallel to the charge collection plane.