Auger Parameters for a variety of silicon compounds have been measured by a combination of XPS using both AIKα ZrLα characteristic x‐radiation, and of XAES using Bremsstrahlung radiation. The Parameters so derived have then been used to study the chemical states of silicon at and near interfaces in the oxide film formed by air‐and CO 2 ‐oxidation of Fe/Si alloys. Supportive evidence for the interpretations is provided by the widths and shapes of the silicon KL 2,3 L 2,3 Auger peaks.
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Rivière et al. (1986) studied this question.
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