Defect levels in semi-insulating GaAs and InP are investigated by deep level photodiffractive spectroscopy. Temperature-dependent four-wave mixing based both on photochromic and photorefractive effects permits a determination of the energy levels within the semiconductor band gap. This optical technique eliminates difficulties encountered with high-resistivity material using conventional electrical measurements.
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Nolte et al. (1990) studied this question.
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