Carrier mobility model for simulation of SiC-based electronic devices

Simple analytical approximations are proposed for describing the temperature and concentration dependences of low-field mobility in the main polytypes of silicon carbide (SiC): 6H, 4H and 3C in wide ranges of temperature and concentration. The obtained results can be directly used for the computer simulation of SiC-based devices. Different approaches to the analytical approximation of SiC parameters are critically correlated and analysed.