All-optical logic gates using nonlinear effects in silicon-on-insulator waveguides

We propose multiple all-optical logic operations in complementary metal oxide semiconductor compatible silicon-on-insulator waveguides based on three nonlinear phenomena, stimulated Raman scattering, free carrier absorption, and cross phase modulation. The performance of three optical logic operations is simulated by use of the finite-difference time-domain method. We achieved an extinction ratio of approximately 13 dB between two logic levels.