1 mW CMOS polyphase channel filter for Bluetooth

A polyphase transconductor-capacitor (Gm–C) channel filter for a low-IF Bluetooth transceiver is described. It is designed in a 2.5 V, 0.25 μm standard CMOS process and employs a novel fully differential transconductor. Simulated performance is presented showing good fifth-order bandpass filter response (1 MHz centre frequency, 1.2 MHz bandwidth), 1 dB compression at l.3 V pk–pk, signal-to-noise ratio of 68.2 dB and an input third-order intermodulation product of 34.2 dBV. The power consumption is 1 mW and estimated chip area is 0.1 mm2.