Epitaxial BiFeO3∕La0.7Sr0.3MnO3 (BFO/LSMO) heterostructures were grown on SrTiO3 (001) substrates. Dielectric properties of the BFO thin films were investigated in an In/BFO/LSMO capacitor configuration. The capacitance of the capacitor shows strong dependences on measuring frequency and bias voltage especially in low frequency region (⩽1MHz). By means of complex impedance analysis, it is found that the interfacial polarization caused by space charges in the film/electrode interfaces plays an important role in the dielectric behavior of the capacitor. Our results indicate that the influences of film/electrode interfaces might not be neglected on the dielectric properties of the BFO thin film capacitors.
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Liu et al. (2008) studied this question.
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