Antiferroelectric 0.94(Bi0.534Na0.5)TiO3-0.06BaTiO3 ceramics were prepared using a solid-state reaction method, involving the addition of excessive amounts of Bi2O3. The resulting ceramics featured a very high phase transition temperature (T m ∼330°C), from the antiferroelectric to the paraelectric phase, and a low depolarization temperature (T d < 25°C). The broad temperature range, within which antiferroelectric properties are retained, of the prepared materials indicates their higher potential over lead-based antiferroelectric ceramics such as PZT-based materials that exhibit a lower T m ⩽ 170°C. The lower T d and higher T m obtained values, relative to those reported in the literature, are believed to be due to the formation of A-site vacancies originating from the incorporation of excess Bi into the perovskite structure of the studied sample. In addition, the synthesized sample shows a high dielectric constant of ∼1460, in a temperature range of 50–150°C at 1 kHz, and a high energy storage density of 0.71 J/cm3, which is an asset in energy storage capacitor applications.
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Li et al. (2013) studied this question.
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