High-power type AlGaInP laser diodes (λL = 635 nm) with the current-blocking region near the facets have been successfully fabricated for the first time, by MOCVD using the (100) GaAs substrates with a misorientation of 5° towards the (100) direction. The maximum continuous wave output power was achieved with about 33 mW at 20°C. Fundamental transverse-mode operation was obtained up to 20 mW.
No takes yet. Share an insight, caveat, or question.
Hamada et al. (1991) studied this question.
Synapse has enriched one closely related paper. Consider it for comparative context: