New experimental results on the positron annihilation in Si and GaAs semiconducting crystals irradiated by supercurrent beams of charged particles are reported. Positronium states localized in the area of radiation-induced damages of vacancy type are detected. If the supercurrent irradiation intensity is enhanced (electron, proton irradiation) the mean dimensions of defects which are positron annihilation centres are decreased. A model for destroying semiconductors by the supercurrent proton irradiation high current density in a pulse is proposed.
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A. D. Pogrebnyak (1984) studied this question.
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