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Barium titanate thin films were prepared by spin coating deposition technique of an acetic precursor sol and sintered at 750, 900 and 1050?C. Phase composition of the obtained thin films was characterized by X-ray diffraction and Raman spectroscopy. Their morphology was analysed by scanning electron microscopy and atomic force microscopy. Dielectric properties of thin films sintered at 750 and 900 ?C were characterized by LCD device, where the influence of sintering temperature on dielectric permittivity and loss tangent was inspected. It was concluded that higher sintering temperature increases grain size and amount of tetragonal phase, hence higher relative permittivity was recorded. The almost constant relative permittivity in the measured frequency (800Hz-0.5MHz) and temperature (25-200?C) ranges as well as low dielectric loss are very important for the application of BaTiO3 films in microelectronic devices.
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Bajac et al. (2014) studied this question.
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