Properties of n (AlxGa1−xAs) -p (GaAs) heterojunctions grown by liquid-phase epitaxial (LPE) techniques were investigated. It was found that an energy barrier in the form of a ’’spike’’ can be formed at the interface as a result of Zn out diffusion from the GaAs layer. When Ge was substituted for Zn as the p-type dopant, no such energy barrier was observed. The results are interpreted in terms of the graded-gap heterojunction model.
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Cheung et al. (1975) studied this question.
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