Metal-insulator-metal (MIM) capacitors with ZrLaOx/ZrTiOx/ZrLaOxlaminate as the insulator were explored in this work. Single ZrTiOx dielectric was found to have a negative quadratic voltage coefficient of capacitance (VCC-α) with a high κ value of 22.5. By integrating this dielectric with ZrLaOx which provides a positive VCC-α and a high κ value of 25.8, the “canceling effect” of VCC-α can be achieved while a high capacitance density can be maintained. MIM capacitors with the laminated structure display desirable characteristics in terms of a capacitance density of 14.6 fF/μm2, a low VCC-α of 33 ppm/V2, negligible frequency dispersion, and satisfactory leakage current of 1.6 × 10-6A/cm2at -1.5 V. These results also well meet the International Technology Roadmap for Semiconductors requirement set for 2020.
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Chen et al. (2012) studied this question.
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