Improved Capacitance Density and Reliability of High-κNi/ZrO₂/TiN$ MIM Capacitors Using Laser-Annealing Technique

We have fabricated high-κ Ni/ZrO2/TiN metal-insulator-metal capacitors with a very high 52-fF/μm2capacitance density, a low leakage current of 1.6 × 10-7A/cm2, and good ten-year reliability with a small ΔC/C of 1.7% at 2 V. From X-ray diffraction measurements, laser annealing can improve the permittivity of ZrO2due to tetragonal-phase formation which in turn helps enhance capacitance density and reliability. Such excellent device integrity is attributed to the combination of enhanced ZrO2tetragonal phase by laser annealing, high work-function Ni electrode, and good bottom-interface treatment.