Depth profiling on a sputtered bevel of sub‐degree slope angle

A new method is described whereby a surface can be bevel‐sectioned by means of sputtering at a slope angle of any desired sharpness. In contrast with other proposals of sputter‐bevelling this method produces an elevated bevel section. Measurements on a shallow diffusion profile of boron in a silicon wafer using this method show the profile reproduction to be very satisfactory. Distorting effects on the projection of the depth profile on the sputtered bevel are discussed. Scanning Auger and ion microprobes are compared for their suitability for reproducing a depth profile from its projection on a sputtered bevel.