In this work we have carried out a systematic study of the dependence of magneto-electrical properties of Mn-doped ZnO thin films deposited in various gas (Ar, Ar+N2, and Ar+O2) ambiences. The magneto-impedance spectra of the Mn-doped ZnO thin films have been analyzed using equivalent circuits composed of resistors and capacitors. The results show that both electrical conductivity and dielectric relaxation of grains and grain boundaries contribute to the magneto-dynamics of the polycrystalline film. Further analysis of the electro-magnetic parameters suggests that the oxide-based magnetic semiconductors may applicable to high frequency electro-magnetic devices.
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Fu et al. (2010) studied this question.
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