High-k and low-k nanocomposite gate dielectrics for low voltage organic thin film transistors

Ce O 2 – Si O 2 nanocomposite films were used as the gate dielectrics in organic thin film transistors (OTFTs) with pentacene active semiconductor. CeO2–SiO2 composite films exhibited a high dielectric capacitance of 57nF∕cm2 with exceptionally low leakage current. Good device characteristics were obtained with saturation at low operating voltages (∼2V) and with a field effect mobility of 0.84cm2V−1s−1, a threshold voltage of ∼0.25V, an on/off current ratio of 103, and a subthreshold slope of 0.3V∕decade, whereas the gate leakage current density is considerably lowered. These results should therefore increase the prospects of using OTFTs in low power applications such as portable devices.