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Transparent and conductive undoped zinc oxide films were prepared by atomic layer deposition method for use in tris (8-hydroxyquinoline) aluminum (Alq3)-based organic light emitting diodes. The properties of the ZnO layers were investigated. The ZnO/CuI/Alq3/poly(ethylene glycol) dimethyl ether/Al device turned on at 7.9 V and demonstrated external quantum efficiency of 1.5% which is better comparing to the same structure but with indium tin oxide as anode layer.
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Łuka et al. (2010) studied this question.
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