Electron-transport properties of degenerate ZnSnN2 doped with oxygen

In this study, analysis of the electron mobility in ZnSnN2 epilayers that were unintentionally doped with oxygen (ZnSnN2−xOx) was performed to elucidate the reason for the low mobilities of ~ 20 cm2 V−1 s−1. While roughly 30% of the incorporated oxygen donated electrons, the rest existed as neutral impurities. Seebeck-effect measurements revealed that scattering by neutral impurities governed the electron transport. The theoretical mobility calculated taking into account the scattering by neutral impurities and ionized impurities reproduced the experimental Hall mobility. We concluded that the low electron mobility is attributed to the presence of the neutral oxygen impurities in high concentration.