Capacitance-voltage characteristics of a metal-oxide-amorphous silicon structure are analyzed in order to obtain the density of states N(E) in microwave glow discharge amorphous silicon films. Our measurement and deconvolution techniques reveal some structure in the density of states profile. At the midgap N(E) is found to be lower than 1017 cm−3eV−1.
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Aktik et al. (1982) studied this question.
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