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The electric field effect on YBa2Cu3O y was investigated at room temperature by using the Al-MgO-(001)YBa2Cu3O y metal-insulator-superconductor (MIS) structure. Special care was taken for preparation of a good interface: heteroepitaxial growth technology was employed for MgO-YBa2Cu3O y successive growth. A typical MIS capacitance-voltage (C-V) curve was obtained under the condition of the reduced carrier concentration, suggesting that the existing band diagram could be applicable to YBa2Cu3O y as well as to semiconductors.
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Kabasawa et al. (1990) studied this question.
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