Intrinsic transconductance extraction for deep-submicrometer MOSFETs

Significant error in the extracted intrinsic transconductance g/sub mi/ can arise from source-drain resistance asymmetry. A simple procedure to either correct for or avoid this source of error is outlined. Using deep-submicrometer devices, experimental results that demonstrate the severity of the potential error and to verify the applicability of the proposed technique are presented. A method which extracts the individual values of the source and drain resistances is also described.>