Recent studies in several laboratories have shown that some thicknessdependent physical properties of a-Si : H may be modelled on a thin, constant-thickness surface layer adjoining a variable-thickness bulk layer. Water permeation, Auger electron spectroscopy and elastic-recoil detection results from our laboratory all point to contamination of the a-Si : H surface as a source of the thin layer.
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Sacher et al. (1984) studied this question.
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