A quenching apparatus was built in which the gaseous environment could be controlled to an oxygen partial pressure of less than 10 -14 Pa, in order to examine the effect of oxygen on the quenched-in resistivity, Delta rho Q , of thin, high-purity, copper samples. Oxygen was found to significantly affect measurements of Delta rho Q through internal oxidation of magnetic impurities, through precipitate formation and through changes of the size-effect parameters (surface specularity and bulk mean free path of the electron). The complex interaction of these effects of oxygen on the quenched-in resistivity of copper samples is discussed.
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Munday et al. (1983) studied this question.
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