Model for diffusion and trapping of hydrogen in crystalline silicon

A simplified analysis is presented to describe diffusion and trapping of atomic hydrogen in crystalline silicon. Predictions of the rate of advancement of the trapped hydrogen front as a function of process and material variables are obtained from a numerical solution of the transport equations. We demonstrate that the solutions are compatible with data on boron passivation at 150 °C only when the diffusivities obtained by extrapolation from the high-temperature results of Van Wieringen and Warmoltz [Physica 22, 849 (1956)] are used to represent atomic hydrogen diffusion in the absence of trapping.