Hydrogenation of the ‘‘new oxygen donor’’ traps in silicon

Hydrogenation was performed at moderate temperatures (≤300 °C) on Czochralski-grown Si samples that contained high concentrations of the oxygen-related ‘‘new donor’’ (ND) traps. From deep level transient spectroscopy, a comparison of spectra from untreated reference and hydrogenated material reveals that two different types of defect states contribute to the continuous energy distribution of the ND traps. The experimental and theoretical results further establish the ‘‘SiOx interface’’ model for the ND defects.