Effect of the statistical shift on the anomalous conductivities of n-type hydrogenated amorphous silicon

We calculated the shift of Fermi energy EF with temperature, using a model density of states for hydrogenated amorphous silicon (a-Si:H) similar to that of deep level transient spectroscopy results, by a numerical method. The conductivity σ was calculated from the calculated EF as a function of temperature. It was found that some features of anomalous transport phenomena of n-type a-Si:H such as kinks or the continuous bending of log σ vs 1/T curves and the Meyer–Neldel-type preexponential factors can be explained, at least in part, by the statistical shift alone.