The behaviour is studied of thermo-e.m.f. and relative electroresistance of single crystal narrow gap semiconductors Sb2Te3 of p-type under hydrostatic pressure up to 9 GPa and temperatures up to 400 °C. Qualitative changes of kinetic coefficients show the formation of three high pressure phases of Sb2Te3. The formation conditions of these phases and three hypothetical equilibrium P-T-diagrams of Sb2Te3 are given and discussed. High pressure phases are narrow gap semiconductors with electronic conductivity.
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Khvostantsev et al. (1985) studied this question.
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