Hole drift velocity in high-purity Ge between 8 and 220 °K

The hole drift velocity in high-purity Ge as a function of electric field (2−104 V/cm and temperature (8–220 °K) has been measured with the time-of-flight technique. The electric field was applied parallel to the 〈100〉 axis. The drift mobility in the Ohmic regime is in agreement with measurements of Hall mobility in high-purity Ge and with theoretical predictions. At temperatures below 100 °K the drift velocity reaches limiting values, and at 8 °K it is 1.3×107 cm/sec.