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Polycrystalline iron oxide films were fabricated using the reactive sputtering method without substrate heating. Structure characterization indicates that the dominant phases in the films evolve from α-Fe to pure Fe 3 O 4 with the increasing O 2 flow rate. In polycrystalline Fe 3 O 4 films, disordered atoms exist at the grain boundaries. Magnetic properties analyses reveal that the room-temperature magnetization first decreases and later increases due to the variation of the volume fraction of the paramagnetic FeO phase with a Néel temperature of 198 K. The magnetoresistance MR (= [ R ( H ) − R (0)]/ R (0)) of the films increases from 0.1% for pure Fe film to 10.6% for the Fe 3 O 4 film at 80 K under a 90 kOe field. The transport mechanism of FeO–Fe 3 O 4 and Fe 3 O 4 films is suggested to be the tunnelling process, which satisfies the log ρ ∼ T −1/2 relation. The Hall resistivity of the Fe 3 O 4 film decreases with increasing temperature. The ordinary and extraordinary Hall coefficients of the Fe 3 O 4 film at 300 K are about 100 and 420 times larger than those of bulk Fe.
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Mi et al. (2006) studied this question.
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