The formation of p channel (p∼3×1017 cm−3) and p+ regions (p>5×1018 cm−3) in GaAs by rapid annealing of Be, Mg, Zn, or Cd implants at 900–950 °C is reported. The electrical characteristics of each species were investigated by capacitance-voltage profiling, Hall-effect and microwave photoconductance measurements, and particular emphasis was placed on determining the uniformity of activation over 2-in.-diam wafers. The results demonstrate that rapid thermal annealing is well suited to GaAs integrated circuit applications.
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Pearton et al. (1985) studied this question.
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