The depth distribution of Zn implanted into GaAs was measured using secondary ion mass spectrometry (SIMS). Hole concentration profiles agreed well with atomic concentration profiles at the optimum annealing temperature of around 700°C. Electrical activity of the implanted Zn was over 90% taking into account the out-diffusion of Zn. Implanted Zn atoms were redistributed during capless annealing and piled up at a depth of about R p+1.5ΔR p. Rutherford backscattering measurements indicated that the pileup occurred near the interface between the amorphous layer induced by high dose ion implantation and the single crystal.
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Kasahara et al. (1982) studied this question.
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