We study the formation and decay of electron-hole droplets in diamond at low and high temperatures under different excitations by master equations. The calculation reveals that at low temperature the kinetics of the system is similar to that of a direct semiconductor, whereas at high temperature it is metastable and similar to an indirect semiconductor. Our results at low temperature are consistent with the experimental findings reported by Nagai et al. [Phys. Rev. B 68, 081202(R) (2003)]. The kinetics of the e-h system in diamonds at high temperature under both low and high excitations is also predicted.
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Jiang et al. (2005) studied this question.
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