Lattice incorporation of n-type dopants in GaAs

Transmission electron microscopy has been used to investigate precipitates of the n-type dopants S, Si, Se, and the deep acceptor Cr implanted in GaAs and annealed in the temperature range 800–900 °C. The lowest precipitation was observed for S and Si (4–5%) followed by Se (∼12%). Bulk precipitation was observed for Cr. These results are found to correlate inversely with the percentage substitutionality of S, Si, and Cr measured by the technique of proton induced x-ray excitation in combination with Rutherford backscattering channeling.