Depth profiles of disorder characterized by extended defects can be obtained by ion channeling and this capability provides an important extension to studies of implanted systems. A planar channeling analysis technique using 2 MeV /sup 4/He backscattering is developed and applied to two cases. In both cases transmission electron microscopy (TEM) is used to confirm the nature and density of extended defects present. The first case is for channeled implants of P into Si which produces a known density of dislocations at a fixed depth below the surface upon annealing. The second case is Ni-implanted Al, and the first determination of the depth profile of the disorder induced by implantation in Al is obtained.
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Picraux et al. (1980) studied this question.