Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
February 15, 1981Applied Physics Letters

Chromium gettering in GaAs by oxygen implantation

View Full Paper
Ask AI
Bookmark
Share

Authors

PFP.N. FavennecUniversité de BordeauxMGM. GauneauCentre National de la Recherche ScientifiqueHLH. L’HaridonUniversité de Bordeaux

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Favennec et al. (1981) studied this question.

synapsesocial.com/papers/6a8ab4f65c716ca1a5d4836ehttps://doi.org/10.1063/1.92303
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Low-noise GaAs FET's prepared by ion implantation1978 · 48 citations
  2. 2Chromium profiles in semi-insulating GaAs after annealing with a Si3N4 encapsulant1979 · 99 citations
  3. 3Redistribution of Cr during annealing of 80Se-implanted GaAs1979 · 65 citations
  4. 4Low-temperature redistribution of Cr in boron-implanted GaAs in the absence of encapsulant stress1980 · 19 citations