Estimation of impurity profiles in ion-implanted amorphous targets using joined half-Gaussian distributions

A probability distribution function appropriate for nonsymmetrical impurity distributions in ion-implanted targets is defined to consist of two half-Gaussian distributions that join at a modal projected range RM. For projected distances Xp Rm the distribution has standard deviation σ2. For appropriate choices of RM, σ1, and σ2, the proposed distribution is found to provide an extremely good fit for experimental impurity profiles.