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July 15, 1979Applied Physics Letters

Amphoteric behavior of Ge implants in GaAs

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Authors

YYY. K. YeoU.S. Air Force Institute of TechnologyJEJ. E. EhretUnited States Air Force Research LaboratoryFPFrank L. PedrottiMarquette University

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Yeo et al. (1979) studied this question.

synapsesocial.com/papers/6a8ab5d02c59dc159e33280chttps://doi.org/10.1063/1.91035
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Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1A comparison of Sn-, Ge-, Se- and Te-ion-implanted GaAs1977 · 14 citations
  2. 2Measurement of High Resistivity Semiconductors Using the van der Pauw Method1973 · 96 citations
  3. 3Silicon implantation in GaAs1979 · 40 citations