Secondary Defects in 2 MeV Phosphorus Implanted Silicon

Annealing behavior of secondary defects in 2 MeV phosphorus ion implanted (100) silicon has been investigated through cross-sectional and plan-view TEM observation at doses of 2×1013 1×1014 and 5×1014 ions/cm2. The critical dose for generating secondary defects is between 2×1013 and 1×1014 ions/cm2. The maximum defect density is located at a mean depth of 2.1 µm from the surface, a location is deeper than that of the projected range of phosphorus ions and the primary defect peak. This defect position in the crystal is constant under all annealing conditions (e.g., a temperature range of between 750 and 1100°C, annealing time of up to 6780 min at 1000°C), although the vertical distribution width of defects changes with both annealing temperature and time.