1/ f Noise Characteristics of Surface-Treated Normally-Off Al2O3/GaN MOSFETs

Normally off Al2O3/GaN MOSFETs are fabricated with a tetramethylammonium hydroxide (TMAH) treatment as a postgate recess etch. The effects of the surface treatment on the etched GaN surface are investigated using low-frequency (1/f ) noise and capacitance-voltage (C-V) measurements. For a quantitative comparison with conventional devices, the oxide trap density (Not) is extracted using the unified 1/f noise model, whereas the interface trap density (Dit) is extracted using the high-low-frequency C-V method. After the TMAH treatment, Notis found to have decreased from 5.40 × 1019to 2.50 × 1019eV-1cm-3, whereas Ditis decreased from 2.8 × 1012to 1.1 × 1011eV-1cm-2, as compared with conventional devices. The surface treatment is thus shown to lower trap density in the Al2O3/GaN MOSFETs by smoothing the surface and suppressing plasma damage in the recessed GaN surfaces.