We report x-ray photoelectron spectroscopy experimental results on band offsets at interfaces grown by hydrogen and Sb-surfactant mediated epitaxy. For Ge deposited at C in , the valence band discontinuity was of . Using atomic hydrogen and a Sb-monolayer mediated growth, we obtained values of and . Our data show that the surfactant Ge layer strain induced effects on the modification of band offsets are surprisingly negligible.
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Almeida et al. (1999) studied this question.
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